COLLECTOR 1 MAXIMUM RATINGS (TA =25☌ unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc 3 Emitter-Base Voltage VEBO 6.0 Vdc EMITTER Collector Current - Continuous IC 600 mAdc Total Device Dis 1.18. Size:164K onsemi P2N2222A Amplifier Transistors NPN Silicon Features These are Pb-Free Devices. See ordering information) Maximum Ratings Symbol Ra 1.17. Size:168K st 2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage cur 1.14. Size:166K st 2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of col 1.13.
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